On the heels of opening the world’s largest and most competitive 200-mm silicon carbide (SiC) power semiconductor fab in Kulim, Malasia, Infineon Technologies AG has announced the development of the world’s first 300-mm power gallium nitride (GaN) wafer technology. Infineon claims to be the first company in the world to master this groundbreaking technology in an existing and scalable high-volume manufacturing environment. The breakthrough will help substantially drive the market for GaN-based power semiconductors. According to Infineon, chip production on 300-mm wafers is technologically more advanced and significantly more efficient compared to 200-mm wafers. The bigger wafer diameter fits 2.3 times as many chips per wafer, said the manufacturer.
In a press release, Infineon said that it has succeeded in manufacturing 300-mm GaN wafers on an integrated pilot line in existing 300-mm silicon production in its power fab in Villach (Austria) (Figure 1). The company is leveraging well-established competence in the existing production of 300-mm silicon and 200-mm GaN wafers. The manufacturer will further scale GaN capacity aligned with market needs, enabling GaN to achieve cost parity with silicon on RDS(on) level, which means cost parity for comparable Si and GaN products. Thus, further driving the adoption of GaN power ICs and devices in a wide range of applications, enabling the GaN market to reach several billion US-dollars by the end of the decade.
Infineon said it will unveil the first 300-mm GaN wafers to the public at the Electronica trade show, which takes place 12-15 November 2024 in Munich, Germany.
200-mm SiC Power Fab
Last month, Infineon Technologies officially opened the first phase of a new fab in Kulim, Malaysia, which according to the company will become the world’s largest and most competitive 200-mm SiC power semiconductor fab (Figure 2). Malaysian prime minister YAB Dato’ Seri Anwar Ibrahim and chief minister of the state of Kedah YAB Dato’ Seri Haji Muhammad Sanusi Haji Mohd Nor officially joined Infineon CEO Jochen Hanebeck to symbolically launch this first phase of production.
FIG 2. New 200-mm SiC power semiconductor fab in Kulim,
Malaysia. Source: Infineon Technologies.
“New generations of power semiconductors based on innovative technology such as silicon carbide are an absolute prerequisite to achieving decarbonization and climate protection. Our technology increases the energy efficiency of ubiquitous applications such as electric cars, solar and wind power systems and AI datacenters. We are therefore investing in the largest and most efficient high-tech SiC production facility in Malaysia, backed by strong customer commitments,” said Jochen Hanebeck, CEO of Infineon Technologies AG. “Since the demand for semiconductors will constantly rise, the investment in Kulim is highly attractive to our customers, who are backing it with their prepayments. It also increases the resilience of the supply chain for critical components needed for the green transition.”
“Infineon’s remarkable project reinforces Malaysia’s position as a rising major global semiconductor hub” stated Malaysian prime minister YAB Dato’ Seri Anwar Ibrahim. “This major investment, which will locate the world’s largest and most competitive SiC power fab on our shores, will create jobs and opportunities, as well as attract suppliers, universities and top talent. Moreover, it will support Malaysia’s efforts to protect our climate by boosting electrification and increasing the efficiency of many applications, including electric cars and renewable energy. Thus, technology made in Malaysia will become a central part of global decarbonization efforts in the future.”
In a statement, Infineon said that it has secured design wins with a total value of approximately five billion euros (US$ 5.54 B) and has received approximately one billion euros (US$ 1.11 B) in prepayments from existing and new customers for the ongoing expansion of the Kulim 3 fab. Notably, according to Infineon, these design wins include six OEMs in the automotive sector as well as customers in the renewable energy and industrial segments.
Kulim 3 will be closely connected to the Infineon site in Villach, Austria, Infineon’s global competence center for power semiconductors. As a result, both manufacturing sites now share technologies and processes which allow for fast ramping and smooth and highly efficient operation. This expansion in wide bandgap semiconductors complement Infineon’s leading position in silicon, based on 300-mm manufacturing in Villach and Dresden, said the maker. Thus, stated Infineon, it is strengthening its technological leadership across the entire spectrum of power semiconductors, namely silicon, SiC and GaN, respectively.
